Light emitting diode structure, light emitting diode device and the manufacturing method thereof

ABSTRACT

A method for manufacturing a light emitting diode structure uses a removable prefilled layer to attach the flip-type chip on a temporary substrate. A growth substrate of the flip-type chip is removed by laser lift-off, and then the light emitting diode structure is attached to a transparent support body. Lastly, the temporary substrate and the prefilled layer are removed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of Ser. No. 15/357,881filed on Nov. 21, 2016, entitled “LIGHT EMITTING DIODE STRUCTURE, LIGHTEMITTING DIODE DEVICE AND THE MANUFACTURING METHOD THEREOF”; whichapplication claims the benefit of priority from China application No.201610393727.X filed Jun. 3, 2016; the entire disclosures of which areincorporated herein by reference.

BACKGROUND 1. Technical Field

The instant disclosure relates to a method for manufacturing a lightemitting diode (LED) structure, in particular, to a method related to anLED chip without a growth substrate employing laser lift-off to beremoved from the LED chip and the process for forming the same. Inaddition, the LED structure and device manufactured by the above methodare also included.

2. Description of Related Art

Generally, in order to solve the deformation and cave-in problem whichare happened in producing thin film LED chips during sapphire substrateremoved by laser lift-off, an underfill material (or referred to as abuffering material) is introduced for supporting the epitaxy layer.However, the heat expansion coefficient of the underfill material andthe chip is not matched and the risk in the following manufacturingprocess is increased.

SUMMARY

The instant disclosure provides a method for manufacturing an LEDstructure to solve the deformation and cave-in problem after laserlift-off.

In order to solve the above problem, an embodiment of the instantdisclosure provides a method for manufacturing a light emitting diodestructure, comprising: forming a prefilled layer in a gap between aflip-type chip and a temporary substrate; fixing a flip-type chip on atemporary substrate by providing a removable prefilled material to forma prefilled layer in the gap between the flip-type chip and thetemporary substrate; laser lifting-off the growth substrate of theflip-type chip; adhering a support body having wavelength convertingmaterial on the above structure; and removing the temporary substrateand the prefilled layer.

In addition, the instant disclosure further provides a light emittingdiode structure and a light emitting diode device comprising the lightemitting diode structure for solving the deformation and cave-in problemgenerated after the laser lift-off process to reduce the warpage andenhance the light emitting performance of the light emitting diodedevice.

In order to further understand the techniques, means and effects of theinstant disclosure, the following detailed descriptions and appendeddrawings are hereby referred to, such that, and through which, thepurposes, features and aspects of the instant disclosure can bethoroughly and concretely appreciated; however, the appended drawingsare merely provided for reference and illustration, without anyintention to be used for limiting the instant disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the instant disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the instant disclosure and, together with thedescription, serve to explain the principles of the instant disclosure.

FIG. 1 is a schematic view of the fixing of the chip of the lightemitting diode structure of the instant disclosure.

FIG. 1A is a schematic view of a flip-type structure embodiment of theflip-type chip of the instant disclosure.

FIG. 2 is a schematic view of the fixing of the flip-type chip on thetemporary substrate of the instant disclosure.

FIG. 3 is a flow diagram of the lift-off process of the flip-type chipof the instant disclosure.

FIG. 4 is a schematic view of the roughened epitaxial structure of theflip-type chip of the instant disclosure.

FIG. 4A is a schematic enlargement view of part A in FIG. 4.

FIG. 4B is curve diagram showing the intensity improvement of theroughened epitaxial structure of the instant disclosure.

FIG. 5 is a schematic view of the flip-type chip fixed to the supportbody of the instant disclosure.

FIG. 5A is a schematic view of another embodiment of the flip-type chipfixed to the support body of the instant disclosure.

FIG. 5B is a schematic view of yet another embodiment of the flip-typechip fixed to the support body of the instant disclosure.

FIG. 6 is a schematic view of the removing of the temporary substrateand the prefilled layer of the instant disclosure.

FIG. 7 is a schematic view of the light emitting diode device of theinstant disclosure.

FIG. 8 is a schematic view of another light emitting diode device of theinstant disclosure.

DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Reference will now be made in detail to the exemplary embodiments of theinstant disclosure, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

Please refer to FIG. 1. FIG. 1 is a schematic view of the fixing of thechip of the light emitting diode structure of the instant disclosure.The instant disclosure provides a method for manufacturing a lightemitting diode structure. First, providing a flip-type chip 100, theflip-type chip has a growth substrate 20, an epitaxial structure 10formed on the growth substrate 20 and at least a pair of chip metal pads14, 17. A gap S is located between the pair of chip metal pads 14, 17.

In the present embodiment, the growth substrate can be a sapphiresubstrate, and each flip-type chip has a first surface 100 a (the upperside shown in FIG. 1) and a second surface 100 b (the lower side shownin FIG. 1) opposite to the first surface 100 a. The side of the firstsurface 100 a is the growth substrate 20, the side of the second surfacehas at least a P-contact pad 17 and at least an N-contact pad 14. A gapS is a space located between the two contact pads.

Please refer to FIG. 1A. FIG. 1A is a schematic view of a flip-typestructure embodiment of the flip-type chip of the instant disclosure.The epitaxial structure 10 of each flip-type chip 100 is formed on theupper surface of the growth substrate 20 and comprises a buffering layer11, an N-type semiconductor layer 12, a light emitting layer 13, and ap-type semiconductor layer 15. The buffering layer 11 can be anundoped-GaN layer, the N-type semiconductor layer 12 can be an N-typegallium nitride layer, and the light emitting layer 13 can be asemiconductor structure of a multiple quantum well (MQW). The p-typesemiconductor layer 15 can be a p-type gallium nitride layer, the n-typecontact pad 14 connects to the N-type semiconductor layer 12, and thep-type contact pad 17 connects to the p-type semiconductor layer 15. Inaddition, an extension space of the gap S extends between thecorresponding p-type semiconductor layer 15 and the N-type semiconductorlayer.

The layered structure of the epitaxial structure 10 is only an example.The layered structure of the epitaxial structure 10 is not limited inthe instant disclosure. For example, the buffering layer 11 can beomitted and the N-type semiconductor layer 12 is directly formed on thegrowth substrate 20. The p-type semiconductor layer 15 can have a metallayer or a transparent conductive oxide layer formed thereon, then thep-type contact pad 17 is formed.

Please refer to FIG. 1. The flip-type chip 100 is fixed to a temporarysubstrate 30 in the instant disclosure. For example, the fixing processincludes coating an adhesive layer 40A on the temporary substrate 30 inadvance. Afterward, the side of the flip-type chip 100 exposing theelectrode contact pad (the second surface 100 b) is placed on theadhesive layer 40A. The adhesive layer 40A is preferably a gel-typematerial without fluidity. The adhesive layer 40A can be served as theprefilled material, and provides the function of supporting andbuffering. The adhesive layer can be further cured.

However, the fixing process can also include forming the adhesive layer40A on the side of the flip-type chip 100 (the second surface 100 b) inadvance, then fixing such a structure with the temporary substrate 30.

The adhesive layer 40A of the instant disclosure is characterized inthat it can be filled into the gap S between the N-type contact pad 14and the p-type contact pad 17 as a support, and the coating thicknessthereof must be larger than the height of the contact pads to ensurethat the adhesive layer 40A can extend into the extension space of thegap S to contact the semiconductor layer, for example, the N-typesemiconductor layer 12, the light emitting layer 13 and the p-typesemiconductor layer 15 within the gap S. Preferably, the adhesive layer40 is not in contact with the growth substrate 20 for increasing theconvenience of removal. Preferably, no less than 70% of the gap S isfilled. The adhesive layer 40 caves-in and extends during the fixing andhas a ductility to attach the flip-type chip 100 on the temporarysubstrate 30. Ductility means that the material will not crack duringthe addition of a force and can be deformed. An adhesive having aviscosity of 300 to 3500 cP can provide sufficient strength and is notlikely to produce adhesive residues. For example, Gel-8170 has a conepenetration of 9 mm and a viscosity of 600 cP.

For example, the adhesive layer 40A can be gallium, silicone gel,polydimethylsiloxane (PDMS), a heat-sensitive gel material or aphoto-sensitive gel material, etc. Gallium is solid under roomtemperature and becomes a liquid after being heated to above 100° C.Silicone gel has good physical properties and buffering property afterbeing cured, for example, silicone gel can be heated to a temperature of80° C. PDMS is a polymer organic silicon compound and is often referredto as organic silicon. PDMS has good plasticity, flexibility and hightransparency, and has low surface free energy.

Please refer to FIG. 2. FIG. 2 is a schematic view of the fixing of theflip-type chip on the temporary substrate of the instant disclosure.During the procedure of fixing the chip, the flip-type chip 100 isslightly pressed on the adhesive layer 40A, thereby filling a removableprefilled material in the gap S between the flip-type chip 100 and thetemporary substrate 30 and forming a prefilled layer 40.

Taking gallium as an example, such a material is solid under roomtemperature and becomes liquid after heating in 100° C. water for 10minutes. Liquid gallium is flatly coated on the temporary substrate 30.The flip-type chip 100 is placed on liquid gallium and a small pressureis applied. The structure is cooled under −20° C. for 20 minutes. Themeasurement result shows that at least 95% of the gap S is filled.

In the case of silicone gel and PDMS, after being coated on thetemporary substrate 30, these materials are cured and the flip-type chip100 is placed thereon, and a small pressure is applied. The measurementshows at least 70% of the gap S is filled.

Please refer to FIG. 3. FIG. 3 is a flow diagram of the lift-off processof the flip-type chip of the instant disclosure. The second step of themethod provided by the instant disclosure is laser lifting-off thegrowth substrate 20 of the flip-type chip 100. Preferably, a chip-scalelaser lift-off is used to prevent too much press from being generated bythe die-scale laser lift-off process leading to serious warpage of thewhole die. For example, the present embodiment employs an ultra-violetlaser such as a KrF excimer laser having a wavelength of 248 nm. Theadvantage of such a laser is that the GaN has larger absorptioncoefficient towards the 248 nm excimer laser and so the laser energy ismostly absorbed at the interface. In contrast thereto, the GaN hassmaller absorption coefficient toward a Nd:YAG laser (neodymium-dopedyttrium aluminum garnet laser) having a wavelength of 355 nm, and thepenetration depth is larger leading to the formation of the defects inthe material.

For example, when the growth substrate 20 is a sapphire substrate, alaser is focused on the gallium nitride layer and the sapphire substrateis lifted-off by suitable laser energy such as energy from 50 to 1100 mJ(micro Joule). Taking a 45 Mil flip-type chip as an example, laserenergy of 950 mJ is able to achieve complete lift-off. Insufficientenergy would lead to incomplete lift-off and the light emitting layerwould be damaged. In addition, the size of the laser beam must beslightly larger than the size of the flip-type chip to be lifted-off,preferably, the side length of the laser beam is larger than that of theflip-type chip for at least 40 micrometers (μm). Taking a 45 Milflip-type chip as an example, the chip has a side length of 1143micrometers and a length of 60 micrometers is set for each side, thelaser beam can have a size of 1260 micrometers for ensuring the completeradiation of the sample by the laser beam. Since the laser energysatisfies Gaussian distribution, uneven energy would lead to chip damageand hence, the position of the light source is adjusted based ondifferent conditions.

Please refer to FIG. 4 and FIG. 4A. FIG. 4 is a schematic view of theroughened epitaxial structure of the flip-type chip of the instantdisclosure, and FIG. 4A is the enlargement of the A part in FIG. 4. Thethird step of the method provided by the instant disclosure isroughening a semiconductor layer of the epitaxial structure 10 which isexposed after the growth substrate 20 being lifted-off, in which thesemiconductor layer is the N-type semiconductor layer 12. In the presentembodiment, the N-type semiconductor layer 12 is an N-type GaN layer.The step of roughening the semiconductor layer comprises: performingwet-etching by alkali hydroxides until pyramids 1211 formed on thesurface of the upper surface 121 of the semiconductor layer occupy atleast 20% of the surface area. When necessary, the wet-etching furthercomprises assisted-etching by ultra-violet light or heat for increasingthe area of the pyramids 1211.

To be specific, when the semiconductor layer is lifted-off from thegrowth substrate, residues or die defects may be remained on the surfaceof the semiconductor layer. An etchant can be used to etch thesemiconductor layer exposed from the surface to expose differentpolygonal surfaces of the crystal. Specifically, the etchant is awet-etching or gaseous etchant comprising an acid or a base. The gaseousetchant can be a corrosive gas (such as hydrogen or chlorine) which canbe used under high temperature. Wet-etching etchant can be,particularly, aqueous alkali hydroxides (such as KOH). Preferably, theetchant is aqueous alkali hydroxides. The formed polygonal surfaces canform a pyramid structure and hence, the outer surface of thesemiconductor layer can have a convex structure formed by the pluralityof pyramids (each is a polyhedron). According to an embodiment, theabove process can remove the nitride semiconductor material by theetching process, and enable the surface with pyramids structure to faceto the substrate.

For example, the wet-etching process comprises the following steps:immersing the flip-type chip 100 on which the growth substrate 20 isremoved in a 3M (volume molarity, mol/L) potassium hydroxide solutionfor at least 10 minutes for roughening the surface of the N-typesemiconductor 12 by hydroxide ions, and taking out the flip-type chip100 and washing the flip-type chip 100 by water via ultrasonication fora predetermined time, for example, for 10 minutes. If some galliumparticles remain on the flip-type chip 100, potassium hydroxide or acidssuch as hydrochloride (HCl) having higher concentration can be used.

Please refer to FIG. 4B. FIG. 4B is curve diagram showing the intensityimprovement of the roughened epitaxial structure of the instantdisclosure. According to experiment results, when the immersing time ofthe flip-type chip 100 is 15 minutes (for removing the growth substrate20), the 45 Mil flip-type chip subjected to different etching times hasintensity brightness increasing to 130% compared to the flip-type chipwithout having been subjected to laser lift-off.

Please refer to FIG. 5. FIG. 5 is a schematic view of the flip-type chipfixed to the support body of the instant disclosure. The fourth step ofthe method provided by the instant disclosure is attaching (adhering) atransparent support body 50 on the semiconductor layer. As shown in FIG.1A, the semiconductor layer is the N-type semiconductor layer 12 on thetop surface of the epitaxial structure 10. Therefore, a light emittingdiode structure 200 (without the temporary substrate 30 and theprefilled layer 40) is formed. The support body 50 used in the presentembodiment is a transparent layer having a wavelength convertingmaterial such as a fluorescent sheet. The use of the support body 50 isto avoid the generation of stress after the growth substrate 20 isremoved which leads to the warpage of the light emitting layer 13 byusing the fluorescent sheet. In addition, by controlling the width ofthe fluorescent sheet to cover the epitaxial structure 10, the instantdisclosure is able to prevent the blue light of the light emitting layer13 from leaking from the side of the epitaxial structure 10 anddecreasing the light emitting performance.

In the instant disclosure, the support body 50 is a fluorescent sheet ora gel material comprising a wavelength converting material.

For example, the step of attaching (or adhering) the support body 10comprises attaching the fluorescent sheet on the epitaxial structure 10,i.e., the fluorescent sheet is attached on the N-type semiconductorlayer 12 of the epitaxial structure 10 as shown in FIG. 1A. In apreferable implementation, the fluorescent sheet is a sheet-likematerial having mixed fluorescent powders and gels, ceramics or glasses.The Shore hardness of the fluorescent sheet after curing is larger thanD40 and the thickness is larger than 150 micrometers (μm) for supportingthe light emitting layer 13. The size of the fluorescent sheet is largeror equal to the flip-type chip 100. The attachment can be achieved by adie bonder which applies about 120 g of force on the flip-type chip 100(without the growth substrate 20) for ensuring a complete attachment.

For example, in the case of a gel material being used, the procedure ofattaching the support body 50 comprises directly covering the gelmaterial on the epitaxial structure 10. A die bonder (not shown) can beused for coating the gel material having a wavelength convertingmaterial, in which the amount of the gel material must be sufficient tocover the entire flip-type chip 100 without the growth substrate 20,i.e., covering the upper surface 121 and four side surfaces. As shown inFIG. 5A, the support body 50 extends to the two sides of the epitaxialstructure 10 and forms a light emitting structure 200 a. In addition,since the gel material would directly contact with the flip-type chip100, a gel material which is heat-resistant and photo-resistant must beused, for example, a silicone gel having a reflectance of 1.4.

Please refer to FIG. 5B. FIG. 5B is a schematic view of yet anotherembodiment of the flip-type chip fixed to the support body of theinstant disclosure. The difference between the present embodiment andthe previous embodiment is that the width of the support body 50 b issubstantially equal to the width of the epitaxial structure 10 in thepresent embodiment. In the embodiments of the instant disclosure, thewidth of the support body can be larger than or equal to the width ofthe epitaxial structure 10.

After removing the growth substrate 20, the light emitting layer 13 willgenerate warpage. Therefore, the transparent support bodies 50, 50 a, 50b having fluorescent powder (wavelength converting material) can solvethis problem which is induced by stress, and by controlling the widthsof the transparent support bodies, the blue light of the light emittinglayer 13 is prevented from leaking. In addition, after removing thegrowth substrate 20, the thickness of the chip can be reduced by 150 μmand the side light emitting effect can be further avoided. In addition,since the light emitting layer 13 of the chip has a thickness of lessthan 10 μm, the blue light is almost emitted from the front side and canbe converted into white light.

Please refer to FIG. 6. FIG. 6 is a schematic view of the removing ofthe temporary substrate and the prefilled layer of the instantdisclosure. The fifth step of the method provided by the instantdisclosure is removing the temporary substrate 30 and the prefilledlayer 40. For example, when the prefilled layer 40 is made of gallium,the procedure of removing the temporary substrate comprises thefollowing steps: impregnating the epitaxial structure fixed on thetemporary substrate 30 by the gallium as the prefilled layer 40 in waterof 100° C. for a predetermined time; and optionally observing if thereis any gallium residue, if a gallium residue is presented, washing asurface of the light emitting diode structure with hydrochloride. Theadvantages of the above procedure are that the temporary substrate 30 iseasy to remove since it has a relatively low melting point that enablestreatment with hot water, and the temporary substrate can be usedrepeatedly.

For example, when the prefilled layer 40 is made of silicone gel, theprocedure of removing the temporary substrate 30 comprises the followingstep: picking up the light emitting diode 200 from the silicone gel. Theadvantages of the above procedure are that the temporary substrate 30 iseasy to remove by directly picking it up, and the temporary substratecan be used repeatedly. The viscosity of the silicone gel is preferablyfrom 300 cP to 3500 cP.

For example, when the prefilled layer 40 is polydimethylsiloxane, theprocedure of removing the temporary substrate 30 comprises the followingsteps: removing the light emitting diode structure 200 from thepolydimethylsiloxane by an adhesive film (not shown); and optionallyobserving if there is any polydimethylsiloxane residue, and washing asurface of the light emitting diode structure 200 by acetone when aresidue of the polydimethylsiloxane is remained on the surface of thelight emitting diode structure 200. The advantages of the aboveprocedure are that the temporary substrate 30 is easy to remove. Thepolydimethylsiloxane preferably has a viscosity of from 300 cP to 3500cP.

For example, when the prefilled layer 40 is a heat-sensitive gelmaterial such as a thermal release tape, the procedure of removing thetemporary substrate 30 comprises the following steps: heating thethermal release tape until the tape is released. Taking the Nitto 31950Efrom Nitto Denko as an example, heating the tape under 150° C. for 5minutes can release the tape while curing the package gel. Afterwards,picking up the flip-type chip 100 from the thermal release tape. Theadvantages of the above procedure are that the temporary substrate 30 iseasy to remove by directly drawing the flip-type chip 100 after theadhesive is released, and is not likely to generate adhesive residue andit is not necessary to use any solvents.

For example, when the prefilled layer 40 is a photo-sensitive gelmaterial such as an ultra-violet light photo release tape, the procedureof removing the temporary substrate 30 comprises the following steps:radiating the ultra-violet light photo release tape by ultra-violetlight until the tape is cured and released, such as radiating lighthaving a wavelength of 365 nm and a power of 36 W/cm² for 15 to 60seconds. Afterward, picking up the light emitting diode structure 200from the ultra-violet tape. The advantages of the above procedure arethat the temporary substrate 30 is easy to remove by directly drawingthe flip-type chip 100 after the adhesive is released, and is not likelyto generate adhesive residue and it is not necessary to use anysolvents.

Please refer to FIG. 7. FIG. 7 is a schematic view of the light emittingdiode device of the instant disclosure. The method provided by theinstant disclosure further comprises fixing the light emitting diodestructure 200 on a conductive substrate 60 for forming a light emittingdiode device. The die-bonding process can be achieved by eutectic,welding or pressing die bonding processes. A light emitting diode device300 is formed. For example, a plurality of light emitting diodestructures 200 can be regularly arranged on the conductive substrate 60at the same time and a bonding process is performed. The advantage isthat since the light emitting diode structure 200 is supported by thesupport body 50 such as a wavelength converting material layer insteadof the growth substrate 20 hence, the die-bonding nozzle (not shown) isable to pick up the light emitting diode structure 200 from thewavelength converting material layer.

Please refer to FIG. 8. FIG. 8 is a schematic view of another lightemitting diode device of the instant disclosure. The instant disclosureprovides a white wall forming procedure. The present embodiment covers aresin 70 on the side surface of the light emitting diode structure 200,and a cutting process is performed for forming a light emitting diodedevice 400 formed by the process mentioned above. The resin forms areflective wall structure, for example, by molding a white resin tocover the side walls of the light emitting diode structure 200 forreducing the viewing angle. Preferably, the viewing angle of thereflective wall structure is less than or equal to 120 degrees. Theadvantage of such procedure is that the resin can serve as a reflectorand is able to reduce the viewing angle without reducing the brightness.

In summary, the characteristics and function of the instant disclosureis to reduce the overall height of the light emitting diode structure,thereby solving the problem of deformation and cave-in induced afterlaser lift-off process. Therefore, the problem of warpage can be solvedand the light emitting performance of the light emitting diode device isincreased.

The above-mentioned descriptions represent merely the exemplaryembodiment of the present disclosure, without any intention to limit thescope of the instant disclosure thereto. Various equivalent changes,alterations or modifications based on the claims of the instantdisclosure are all consequently viewed as being embraced by the scope ofthe instant disclosure.

What is claimed is:
 1. A method for manufacturing a light emitting diodestructure, comprising: providing a flip-type chip having a growthsubstrate and an epitaxial structure formed on the growth substrate;providing a removable prefilled material for fixing the flip-type chipto a temporary substrate to form a prefilled layer in a gap between theflip-type chip and the temporary substrate; wherein the prefilled layeris made of gallium; laser lifting-off the growth substrate of theflip-type chip and exposing an semiconductor layer of the epitaxialstructure; roughening the semiconductor layer of the epitaxial structurewhich is exposed; adhering a support body having a wavelength convertingmaterial on the semiconductor layer; and removing the temporarysubstrate and the prefilled layer.
 2. The method according to claim 1,wherein the step of removing the temporary substrate comprises thefollowing steps: impregnating the epitaxial structure fixed on thetemporary substrate by the gallium as the prefilled layer in water of100° C. for a predetermined time; and washing a surface of the lightemitting diode structure with hydrochloride acid when a residue of thegallium is remained on the surface of light emitting diode structure. 3.The method according to claim 1, wherein the step of roughening thefirst surface of the semiconductor layer of the epitaxial structurecomprises at least one of the following steps: performing wet-etching byalkali hydroxides until a plurality of pyramids formed on the firstsurface of the semiconductor layer occupies at least 20% of the surfacearea; and performing ultra-violet light or heat assisted etching forincreasing the area of the pyramids.
 4. The method according to claim 3,wherein the step of performing wet-etching comprises the followingsteps: immersing the flip-type chip on which the growth substrate isremoved in a potassium hydroxide solution; and taking out the flip-typechip and washing the flip-type chip by water via ultrasonication.
 5. Themethod according to claim 1, wherein the step of adhering the supportbody on the semiconductor layer comprises the following step: covering agel material having the wavelength converting material on the epitaxialstructure and curing the gel material to form the support body fixed tothe epitaxial structure, wherein the hardness of the support body islarger than Shore D40 after curing.
 6. The method according to claim 1,wherein the step of adhering the support body on the semiconductor layercomprises the following step: attaching a fluorescent sheet having thewavelength converting material on the epitaxial structure, wherein thehardness of the fluorescent sheet is larger than Shore D40 after curing,and the size of the fluorescent sheet is larger than or equal to thesize of the flip-type chip.
 7. A light emitting diode structure, thelight emitting diode structure is manufactured by the method accordingto claim
 1. 8. A light emitting diode device, comprising: a conductivesubstrate; and the light emitting diode structure according to claim 7fixed on the conductive substrate.
 9. The light emitting diode deviceaccording to claim 8, further comprising: a reflective wall covering aside surface of the light emitting diode structure for achieving a viewangle of the light emitting diode device of less than or equal to 120degrees.
 10. The light emitting diode device according to claim 8,wherein the width of the support body is substantially equal to thewidth of the epitaxial structure.